^smi-concmcto'i l/^ioaucti, (jna. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistors telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BD501/b description ? collector-emitter sustaining voltage- : vceo(sus)= sov(min) 80v(min) ? high power dissipation applications ? designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage BD501 BD501b BD501 BD501b emitter-base voltage collector current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value 55 85 50 80 5 10 75 150 -55-150 unit v v v a w ?c "c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.39 unit ?c/w iff 1 pin 1. base 2. collector '; : 1 3. emitter 1 2 3 to-220c package f * - b -i -*-v ? .,-- 4-^yl v- h _!'?] k t h c i i it: !t din* a b c d f g h j k l 0 r s u tf i mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 rs i ? rsofr * ^ n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions \vilhout noiiee. information hirni.shed by n.i scmi-c.'onductors is helie\ed to he both accurate and reliable at the lime of wi'i press. ||(iuc\er, n.i seini-condiiciors assumes no responsibility lor nn> errors or omissions discovered in its use. i-( '(inductors encourages customers to verily that datasheets ;nv current be tore placing orders.
silicon npn power transistors BD501/b electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vbe(on) 1 ?_ icbo iebo u hfe fi parameter collector-emitter sustaining voltage collector-emitter saturation voltage emitter cutoff current current-gain ? bandwidth BD501 '? BD501b BD501 BD501b BD501 BD501b BD501 BD501b product conditions lc= 5a; ib= 0.5a lc= 3.5a; ib= 0.35a lc= 5a; voe= 4v lc= 3.5a; vce= 4v vcb= 55v; i e= 0 vcb= 85v;ie= 0 veb= 5v; lc= 0 lc= 5a; vce= 4v lc= 3.5a; vce= 4v lc=1.0a;vce=10v min 50 80 1 typ. 8 max 1 n 1 n 1.0 qfl unit ma mhz
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